Ito Ohmic Contact Metal
10 17 cm 3 after rapid thermal annealing in a wide range of annealing temperatures of 9001150 C. Ohmic contact on p-GaN with a hole concentration of 65 x 10 17 cm-3 shows the lowest ρc of 92 x 10-6 Ω cm 2 when GaN was treated in HClH 2 O 31 solution before metal deposition. Indium Tin Oxide Ohmic Contact To Highly Doped N Gan Sciencedirect A minimum contact resistivity of 4610SUP-6SUPΩcmSUP2SUP. Ito ohmic contact metal . Specific contact resistivity as low as 48 104 Wcm2 was obtained from the Ni 20 A Au 30 A ITO 1000 A contact annealed at 500 C under an oxidizing atmosphere. 191989 External contacts on solar cells are made by depositing thick metal film onto ITO in an appropriate configuration. 152006 The specific contact resistivity and chemical intermixing of indium-tin-oxide ITOTiAu Ohmic contacts on n-type bulk ZnO substrates are reported as a function of annealing temperature up to 450C. A Schottky contact was successfully fabricated by using ITO as the metal. An ohmi...